IFVD

impurity-free vacancy diffusion
(半導体量子井戸構造での)不純物無添加空乏拡散. 吸収端を短波長側へシフトさせる手法.
impurity-free vacancy diffusion; in semiconductor QW(quantum well) structure; uses native defects to produce enhanced intermixing at the well-barrier interface; results in bandgap increase and in reduction of

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